JPH0741155Y2 - プラズマエッチング装置 - Google Patents
プラズマエッチング装置Info
- Publication number
- JPH0741155Y2 JPH0741155Y2 JP1989037071U JP3707189U JPH0741155Y2 JP H0741155 Y2 JPH0741155 Y2 JP H0741155Y2 JP 1989037071 U JP1989037071 U JP 1989037071U JP 3707189 U JP3707189 U JP 3707189U JP H0741155 Y2 JPH0741155 Y2 JP H0741155Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plasma etching
- chamber
- wafer table
- cylindrical insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001020 plasma etching Methods 0.000 title claims description 9
- 239000012212 insulator Substances 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000153444 Verger Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989037071U JPH0741155Y2 (ja) | 1989-03-30 | 1989-03-30 | プラズマエッチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989037071U JPH0741155Y2 (ja) | 1989-03-30 | 1989-03-30 | プラズマエッチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02127030U JPH02127030U (en]) | 1990-10-19 |
| JPH0741155Y2 true JPH0741155Y2 (ja) | 1995-09-20 |
Family
ID=31543854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989037071U Expired - Lifetime JPH0741155Y2 (ja) | 1989-03-30 | 1989-03-30 | プラズマエッチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0741155Y2 (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2684868B2 (ja) * | 1991-05-09 | 1997-12-03 | ソニー株式会社 | ドライエッチング方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196724A (ja) * | 1984-10-17 | 1986-05-15 | Agency Of Ind Science & Technol | 容量結合型プラズマｃｖｄ装置 |
-
1989
- 1989-03-30 JP JP1989037071U patent/JPH0741155Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02127030U (en]) | 1990-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |